طريقة تجريبية بسيطة لتقدير عرض فجوة الطاقة في السيليكون
Abstract
In this work, energy band gap is estimated by passing small forward current through silicon junction diode. The junction voltage variation is studied versus temperature at constant current, and the T-V curve is drawn. From temperature – voltage curve, energy gap is determined. The temperature dependence of has been studied, too.
في هذا العمل، يتم تمرير تيار كهربائي صغير في حالة الاستقطاب المباشر لمتصل ثنائي مصنوع من السيلكون أحادي البلورة. ثم تدرس تغيرات الجهد بين طرفي المتصل بدلالة درجة الحرارة مع المحافظة على ثبات قيمة التيار. يمكننا في النهاية تحديد قيمة عرض الفجوة من الخط البياني لدرجة الحرارة بدلالة الجهد. ندرس في هذه الورقة أيضاً تبعية لدرجة الحرارة في السيليكون.
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