Modeling and Simulation of Carbon Nanotube Diode (CNTs Diode) and its Use in Nonlinear Electronic Applications

Abstract

This study presents the modeling and simulation of a single-walled carbon nanotube diode with a specific energy bandgap, aiming to investigate its operational characteristics and potential for use in nonlinear and high-frequency electronic applications. A numerical and computational model was developed to derive the structural and operational properties of the diode with high precision. Furthermore, normalized curves and parameter sweep methodologies were employed to analyze the impact of various variables on its performance. The results demonstrated that the energy bandgap is one of the most critical factors influencing diode performance, an increase in the bandgap leads to improved rectification efficiency and enhances the diode’s capability to process and rectify high-frequency signals. The simulation also revealed that CNT diodes are capable of rectifying signals up to the megahertz range while maintaining robust performance, making them highly suitable for high-speed electronic applications. Additionally, the findings indicated that nanotubes with a larger energy bandgap achieve superior performance in rectification applications, whereas those with a smaller energy bandgap are more appropriate for frequency multiplier circuits. Moreover, a comparison with silicon diodes exhibited lower thermal sensitivity and greater operational stability for the CNT diode, rendering it a promising candidate for the development of highly efficient, low-power electronic components.